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1 pnz202s (PN202S) darlington phototransistor for optical control systems features darlington output, high sensitivity easy to combine with red and infrared light emitting diodes small size (? 3) ceramic package darlington phototransistors *3 i ce(l) classifications class q r s i ce(l) (ma) 0.2 to 0.8 0.6 to 1.65 1.35 to 5 absolute maximum ratings (ta = 25?c) parameter symbol ratings unit collector to emitter voltage v ceo 20 v emitter to collector voltage v eco 5v collector current i c 30 ma collector power dissipation p c 100 mw operating ambient temperature t opr C25 to +80 ?c storage temperature t stg C30 to +100 ?c electro-optical characteristics (ta = 25?c) parameter symbol conditions min typ max unit dark current i ceo v ce = 10v 0.1 0.5 a collector photo current i ce(l) *3 v ce = 10v, l = 2 lx *1 0.2 5 ma peak sensitivity wavelength p v ce = 10v 800 nm acceptance half angle measured from the optical axis to the half power point 30 deg. response time t r , t f *2 v cc = 10v, i ce(l) = 5ma, r l = 100 ? 150 s collector saturation voltage v ce(sat) i ce(l) = 1ma, l = 100 lx *1 0.7 1.5 v *1 measurements were made using a tungsten lamp (color temperature t = 2856k) as a light source. *2 switching time measurement circuit ?3.0 0.2 ?0.45 0.05 ?0.3 0.05 0.9 0.15 4.1 0.3 2.0 0.2 12.5 min. 1 2 unit : mm 1: emitter 2: collector .( ? t d : delay time t r : rise time (time required for the collector photo current to increase from 10% to 90% of its final value) t f : fall time (time required for the collector photo current to decrease from 90% to 10% of its initial value) sig.in & $ 2 ## )3>/ "
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2 pnz202s darlington phototransistors 0? 10? 20? 30? 40? 50? 60? 70? 80? 90? directivity characteristics p c ta 120 100 80 60 40 20 ambient temperature ta (?c ) collector power dissipation p c (mw) 0 20406080100 0 C 20 i ce(l) v ce 24 20 16 8 4 12 0 collector to emitter voltage v ce (v) collector photo current i ce(l) (ma) 020 16 812 424 ta = 25?c t = 2856k i ce(l) l 10 3 10 2 10 1 illuminance l (lx) collector photo current i ce(l) (ma) 10 10 2 10 3 10 C1 1 v ce = 10v ta = 25?c t = 2856k spectral sensitivity characteristics 100 80 60 40 20 wavelength (nm) relative sensitivity s (%) 400 600 800 1000 1200 0 200 ta = 25?c i ceo ta 10 2 10 C1 10 10 C2 1 ambient temperature ta (?c ) v ce = 10v dark current i ceo ( a) 10 C3 C 20 0 40 80 20 60 100 v ce = 10v i ce(l) ta 10 2 1 10 C1 10 C2 10 ambient temperature ta (?c ) collector photo current i ce(l) (ma) C 20 0 40 80 20 60 100 10 C3 t r i ce(l) 10 3 10 2 collector photo current i ce(l) (ma) rise time t r ( s) 10 C1 110 10 10 C2 v cc = 10v ta = 25?c t f i ce(l) 10 3 10 2 collector photo current i ce(l) (ma) fall time t f ( s) 10 C1 110 10 10 C2 v cc = 10v ta = 25?c 20 90 100 80 70 60 50 40 30 relative sensitivity s (%) 4 #
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- ? 500 ? 100 ? r l = 1k ? 500 ? 100 ? 50 ? 10% 90% sig.in t d t r t f r l v cc sig. out sig. out 50 ? 10% 90% sig.in t d t r t f r l v cc sig. out sig. out
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